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  • 09월 20일 16시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

제126회 대한화학회 학술발표회 및 총회 Understanding of growth mechanism and photoelectrochemical activity of BiVO4/Bi2S3 nanowire composite

등록일
2020년 9월 9일 18시 16분 16초
접수번호
0916
발표코드
ELEC.P-522 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
10월 21일(수) 17:00~17:30
발표형식
포스터
발표분야
Electrochemistry
저자 및
공동저자
Changhyun Hong, Ki Min Nam*
Department of Chemistry, Pusan National University, Korea

A BiVO4/Bi2S3 composite comprising Bi2S3 nanowires on top of BiVO4 film was prepared via hydrothermal process. As additional Bi3+ ions were not provided during the reaction, the BiVO4 served as the Bi3+ source for the growth of Bi2S3. Detailed growth mechanism of the nanowire was elucidated by an analysis of the concentration gradient of Bi3+ and S2- ions during the reaction. The in situ growth was followed by the etching of BiVO4 to Bi3+ and VO43- ions and regrowth to Bi2S3, which resulted in the rapid development of nanowires on the BiVO4 substrate. The fabricated BiVO4/Bi2S3NW composite exhibited an improved photoelectrochemical activity compared to other Bi2S3 samples. The improved efficiency was mainly attributed to both improved charge separation and effective adhesion obtained by the in situ growth.


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