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  • 03월 07일 12시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

Study on XPS analysis by exclusion of amorphous C layer on SiC nano-wires by catalyst supported MOCVD

등록일
2007년 2월 13일 11시 49분 16초
접수번호
1028
발표코드
26P46포 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
금 <발표Ⅳ>
발표형식
포스터
발표분야
물리화학
저자 및
공동저자
남상훈, 부진효
성균관대학교 화학과,
Silicon carbide have many superior properties, such as large band gap energy (2.3~3.4 eV), high thermal conductivity (3.2~4.9 W/Cm K), high electron mobility (1000 cm2/Vs) and good physical and chemical resistance. SiC nano-structure would be favorable for applications in high temperature, high power, and high frequency nanoelectronic devices. In this study, we have deposited cubic-SiC NWs on various metal (Ni, Fe, Au) deposited Si(001) substrates using 1,3-disilabutane as a single molecular precursor by MOCVD method. The general deposition pressure and temperatures were 3.0X10-6 Torr and 1000oC respectively, and the deposition was carried out for 1 hour. Various metals played an important in a catalyst as growing SiC NWs. SiC NWs was grown using the Au catalyst, and amorphous carbon was reigning surrounding the SiC NWs. XPS results shows a-C layer that is removed by Ar sputtering method. Therefore, exclusion of a-C layer is expected to improve emission property of SiC NWs.

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