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129th General Meeting of Korean Chemical Society & Exposition Methology of MoS2-MoSe2 core-shell heterosucture transition metal dichalcogenides synthesis

Submission Date :
2 / 28 / 2022 , 16 : 27 : 00
Abstract Number :
129022828248
Presenting Type:
Poster Presentation
Presenting Area :
Physical Chemistry
Authors :
Insu Lim, Sang-Yong Ju*
Department of Chemistry, Yonsei University, Korea
Assigned Code :
PHYS.P-215 Assigend Code Guideline
Presenting Time :
April 14 (THU) 11:00~13:00
Transition metal dichalcogenides(TMD) have semiconductor properties. Depending on the combination of transition metal and chalcogen, the bandgap can be small up to 1.0-2.5 eV and various photoelectric characteristics can be exhibited, thereby attracting attention as a next generation semiconductor material. Among them, heterostructure of TMD can give wide attention to the physics and technology of new devices by controlling the optical and electronic properties of transition metal dichalcogenides. This poster describes the synthesis of heterostructure of TMD, which are lateral MoS2-MoSe2 core-shell, using chemical vapor deposition. In order to form TMD having a lateral heterostructure, MoS2 was first synthesized on a silicon substrate, and then a chalcogen precursor was changed into Se to grow crystal grains mixed with MoS2, MoSe2, and MoSSe. The synthesis was carried out in an Ar and H2 atmosphere, and it was confirmed by Raman and optical microscopy that MoS2, MoSe2, and MoSSe crystal grains grew. After that, it can be observed that S and Se were shown in the form of an alloy with a heterostructure of TMD, and the fluorescence spectrum occurring at this time was changed in accordance with the ratio of S and Se. Growth conditions of different structures of two-dimensional materials capable of implementing various semiconductor energy structures according to a combination of materials may be optimized, and band gap control and fluorescence absorption control may be easily performed, thereby manufacturing various types of various types of optoelectronic devices.