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  • 09월 05일 13시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

Printable CIS(CuInSe2) Thin-Film Solar Cell

등록일
2007년 9월 4일 11시 30분 31초
접수번호
1595
발표코드
금7I4심 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
금 11시 : 10분
발표형식
심포지엄
발표분야
무기화학 - Current Trends in Industrial Inorganic Materials
저자 및
공동저자
박희선
LG마이크론 연구소/선행개발그룹,
The chalcopyrite ternary semiconductor compound of CuInSe2 has a high absorption coefficient (>105 cm-1) and a direct optical band gap (~1 eV). These properties allow CIS materials to be a good light absorber layer for thin film solar cells. Various kinds of deposition techniques to form a CIS film on a glass, metal, or plastic substrate exist, and only vacuum processes such as sputtering or co-evaporation are successfully used to produce commercial CIS thin-film solar cells in recent years. Non-vacuum processes, however, have been tried in much attention because of its promising opportunities to make low-cost, high throughput, large area of the CIS solar cells. Spraying or printing technique using nanoparticulate CIS inks or pastes is most practically applied to form CuInSe2 layers. The layers are followed by a thermal treatment in Se vapor to give the polycrystalline CIS films. In this work, attempts to manufacture CuInSe2 absorber layers by a paste printing method using solvothermally synthesized CIS nanoparticles will be described with a brief overview of the current photovoltaic technologies and market.

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