KCS

We have tried to find the most suitable conditions for the deposition process of silicon carbide thin films as a material for MEMS techniques. We have also studied its application to semiconductor processes. To do this, we have tried to fabricate several dimensions of cantilevers (10μm~100μm in length) with these silicon carbide thin films. High quality silicon carbide thin films are grown by metal-organic chemical vapor deposition (MOCVD). This process employs single molecular precursors such as diethylmethylsilane(DEMS), 1,3-disilabutane(DSB) at pressures between 1.0×10^-4 and 1.0×10^-5 Torr and a growth temperature in the range of 900~1000 ℃. For initial patterning of cantilevers, we used two patterning methods and compared them. Finally, a high resolution of probe tips on the cantilevers was achieved using electron-beam deposition in carbon atmosphere.