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Study on the Applications of SiC thin films to MEMS techniques through a fabrication process of cantilevers

등록일
2005년 2월 17일 11시 36분 31초
접수번호
0828
발표코드
21P80포 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
토 <발표Ⅲ>
발표형식
포스터
발표분야
물리화학
저자 및
공동저자
현재성, 박진호, 강병창, 부진효
성균관대학교 화학과,
We have tried to find the most suitable conditions for the deposition process of silicon carbide thin films as a material for MEMS techniques. We have also studied its application to semiconductor processes. To do this, we have tried to fabricate several dimensions of cantilevers (10μm~100μm in length) with these silicon carbide thin films. High quality silicon carbide thin films are grown by metal-organic chemical vapor deposition (MOCVD). This process employs single molecular precursors such as diethylmethylsilane(DEMS), 1,3-disilabutane(DSB) at pressures between 1.0×10-4 and 1.0×10-5 Torr and a growth temperature in the range of 900~1000 ℃. For initial patterning of cantilevers, we used two patterning methods and compared them. Finally, a high resolution of probe tips on the cantilevers was achieved using electron-beam deposition in carbon atmosphere.

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