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  • 03월 04일 13시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

Sensing TNT Vapor with Silole-derivatized Porous Silicon Chip

등록일
2005년 2월 17일 13시 43분 34초
접수번호
0882
발표코드
20P54포 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
금 <발표Ⅱ>
발표형식
포스터
발표분야
무기화학
저자 및
공동저자
고기오, 송진우, 권형준1, 손홍래, 조성동
조선대학교 화학과,
1 조선대학교 화학과,
Nanocrystalline porous silicon films have been used to detect the vapors of nitroaromatic compounds such as nitrobenzene, dinitrotoluene, trinitrotoluene, and picric acid in gas phase. Quenching efficiencies of photoluminescence of porous silicon have been measured upon the exposure of analyte-saturated air. The intensity of PL from freshly etched porous silicon is reduced upon exposure to the vapor of NB, DNT, TNT or PA. After 5 min, the percentage of quenching for DNT-saturated air (vapor pressure = 200 ppb at 25゚C) is 3.3%, and 11% and 9.2% in the case of TNT-saturated air (vapor pressure = 4 ppb at 25゚C) and PA-saturated air, respectively. It is interesting to report that 9% of quenching photoluminescence for nitrobenzene was observed just for 10 seconds, since its vapor pressure is much higher than that of others. In the control experiment, the intensity of photoluminescence of a porous silicon sample was found to be stable for one hour under a flow of pure air. Surface of porous silicon chips are derivatized with silole by hydrosilylation to enhance the sensitivity for TNT vapor. Further details will be discussed.

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