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  • 03월 04일 13시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

CVD of ZrO2 Thin Films Using the Novel Single Precursor Zirconium 3-methyl-3-pentoxide, Zr(mp)4

등록일
2005년 2월 17일 13시 46분 46초
접수번호
0887
발표코드
26P277포 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
토 <발표Ⅲ>
발표형식
포스터
발표분야
재료화학
저자 및
공동저자
이영국, 조원태, 양택승, 안기석, 정택모, 김창균, 김윤수
한국화학연구원,
Zirconium oxide films have been deposited on silicon substrates by metal organic chemical vapor deposition (MOCVD) using the newly synthesized novel single precursor, zirconium 3-methyl-3-pentoxide {Zr[OC(CH3)(C2H5)2]4, Zr(mp)4}, with no additional oxygen source. The CVD reaction mechanism was also investigated by gas chromatography/mass spectroscopy (GC/MS) and nuclear magnetic resonance (NMR) analyses of the thermally decomposed vapor phase products collected during the deposition of ZrO2 films. Negligible carbon contamination of the ZrO2 films was observed by X-ray photoelectron spectroscopy (XPS). The morphology, crystallinity, and electrical properties of the ZrO2 films were characterized by atomic force microscopy (AFM), X-ray diffraction (XRD), and capacitance-voltage (C-V) and current-voltage (I-V) measurements.

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