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Synthesis of Ga1-xMnxAs (0≤x≤0.05) Nanowires and Dependence of Their Electronic Structure and Magnetization on the Mn Content

등록일
2008년 2월 14일 10시 59분 21초
접수번호
1281
발표코드
29P9포 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
목 <발표Ⅰ>
발표형식
포스터
발표분야
물리화학
저자 및
공동저자
김한성, 김창현, 조용재, 박정희
고려대학교 소재화학과,
High-density Ga1-xMnxAs (0≤x≤0.05) nanowires were synthesized by the vapor transport method. They consisted of single-crystalline cubic GaAs nanocrystals grown along the [111] directions. The lattice constant decreases initially with increasing amount of Mn doping (x), and then increases as x increases above 0.02. X-ray photoelectron spectroscopy revealed that as the Mn content increases to x = 0.02, the binding energy of Ga 2p shifts to a higher energy, suggesting the possibility of hybridization between the Mn2+ ions and host defects. X-ray absorption spectroscopy and X-ray magnetic circular dichroism confirmed that the Mn2+ ions substitute into the coordinated sites. The magnetization measurement revealed that all of these nanowires exhibited room-temperature ferromagnetic behaviors, most significantly for x = 0.02.

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