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Hydrosilylation of Porous Silicon under UV Irradiation

등록일
2005년 2월 17일 14시 32분 22초
접수번호
0918
발표코드
20P37포 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
금 <발표Ⅰ>
발표형식
포스터
발표분야
무기화학
저자 및
공동저자
손홍래, 김지훈, 고영대, 권용희, 오진화, 조성동
조선대학교 화학과,
Photolytic hydrosilylation of porous silicon was investigated with alkene such as 1-octene, 1-nonene, 1-dodecene, and divinyltetraphenylsilole. Two different types of light sources (300W tungsten lamp and UV (254nm) lamp) for the hydrosilylation were used to know the efficiency of the surface coverage of porous silicon. Both n-type and p-type porous silicon samples were used for this measurements. Characterization of silylated porous silicon was achieved using FTIR instrument by measuring the areas for the alkyl regions. The effect of photoluminescence and reflectivity upon hydrosilylation was also investigated. Etching was carried out as a two-electrode galvanostatic procedure at an anodic current density. The efficiency of hydrosilylation in UV irradiation exhibits much better than that in 300W tungsten lamp. Upon the surface derivatization, the effect of photoluminescence and reflectivity will be discussed.

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