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  • 03월 04일 13시 이후 : 초록수정 불가능, 일정확인 및 검색만 가능

Optical Properties of DBR Porous Silicon and its Possible Application as Sensors

등록일
2005년 2월 17일 14시 36분 11초
접수번호
0922
발표코드
20P60포 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
금 <발표Ⅰ>
발표형식
포스터
발표분야
무기화학
저자 및
공동저자
박종선, 김성기, 고영대, 박성규, 조성동, 손홍래1
조선대학교 화학과,
1조선대학교,
Electro-chemical etching of heavily doped, (100) oriented, P++ (boron) doped silicon wafers resulted in porous silicon (PSi) layers which exhibit strong in-plane anisotropy of refractive index (birefringence). Dielectric stacks of birefringent porous silicon acting as distributed Bragg reflectors have two distinct reflection bands depending on the polarization of the incident linearly polarized light. This effect is caused by a three-dimensional (in plane and in depth) variation of the refraction index. DBR (Distributed Bragg Reflectors) porous silicon were prepared by an electrochemical etch of p++-type silicon wafer of resistivity between 0.1mΩcm with different current density resulting two different refractive indices. Optical characteristics of DBR porous silicon were investigated. Application as a sensor had been investigated. Optical characteristics as asensor will be discussed.

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