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Growth and energy level alignment of pentacene adsorption depending on substrate type

등록일
2008년 8월 11일 21시 47분 13초
접수번호
0896
발표코드
금27D1워 이곳을 클릭하시면 발표코드에 대한 설명을 보실 수 있습니다.
발표시간
금 08시 : 40분
발표형식
워크샵
발표분야
물리화학 - Workshop on Surface and Interface Physical Chemistry
저자 및
공동저자
김정원
한국표준과학연구원, Korea
Conjugated organic molecules are believed as future semiconductor materials due to their substantial carrier mobility and easy-process compatibility. Among them, pentacene is one of the mostly studied molecules for last tens of years, since its mobility already goes far beyond that of amorphous silicon. However, the performance of the pentacene-based field effect transistors does not depend only upon the treatment of pentacene itself but also the interface formation up and down dielectrics and electrodes. The growth of the pentacene thin film and energy level alignment upon adsorption on a substrate are largely affected by surface energy, dipole formation, and manufacturing process. A review over the growth morphology and electronic properties of the pentacene thin films deposited on various surfaces is presented. In particular, the relationship between substrate properties and film growth will be focused on. Here, the pentacene film growth on dielectric substrates with different initial surface states has been investigated using electron spectroscopy and imaging tools such as atomic force microscope and photoelectron emission microscope. The surface treatment of the initial substrate dramatically influences the grain size of the pentacene film and the energy level alignment. This result can be explained in relation to the organic transistor performance.

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