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| Type |
Poster Presentation |
| Area |
재료화학 |
| Room No. |
포스터발표장 |
| Time |
4월 21일 (금요일) 13:00~14:30 |
| Code |
MAT.P-329 |
| Subject |
Low-Voltage Organic Light-Emitting Field-Effect Transistors |
| Authors |
김대규, 이명재1, 최종호*
고려대학교 화학과, Korea
1고려대학교 일반대학원/화학과, Korea
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| Abstract |
In this study, organic light-emitting field effect transistors (OLEFETs) operating at low voltages of |Vop| < 10 V were first produced and characterized. n-Dodecylphosphonic acid (PA-C12)-self-assembled monolayer (SAM)-passivated HfOx dielectrics prepared using sol-gel chemistry were employed to decrease device-operating voltages. Pentacene and N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide acted as p-and n-type materials, and 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran doped into tris(8-hydroxyquinoline) aluminum layer was used as a light-emitting layer to improve the luminescence efficiency. Based upon the growth of well-packed crystalline organic active layers with ambipolar transports, and the high capacitance and low leakage current of the PA-C12-SAM-treated HfOx dielectrics, the OLEFETs present good device performance with light emission at |V| < 10 V in air. The transistor characteristics and operating light-emission mechanisms were discussed based on EL photos acquired using a charge-coupled device camera. |
| E-mail |
daeguyo@hanmail.net |
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119th General Meeting of the KCS