|
Type |
Poster Presentation |
Area |
무기화학 |
Room No. |
포스터발표장 |
Time |
4월 21일 (금요일) 13:00~14:30 |
Code |
INOR.P-51 |
Subject |
Continuous MoxW1-xSe2 Film with Tunable Band Gap via Metal-Organic Chemical Vapor Deposition |
Authors |
이유빈, 이진석* 숙명여자대학교 화학과, Korea |
Abstract |
Study of transition metal dichalcogenides (TMDC) are interested due to their optical, electronic properties. Synthesis of heterostucture TMDC like MoxW1-xS2 has researched variously. But, one of the spotlighted synthesis techniques, metal organic chemical vapor deposition (MOCVD) for synthesis TMDC materials and TMDC alloy films has not been reported yet.
Here, we present the report of synthesis continuous MoxW1-xSe2 films via metal organic chemical vapor deposition method using molybdenum hexacarbonyl (Mo(CO)6), tungsten hexacarbonyl (W(CO)6) and dimethyl selenide (Se(CH4)2) on silicon oxide wafer and characterized by atomic force microscopy (AFM). We observed two peaks of A1g mode, main Raman modes of MoSe2 and WSe2, using micro-Raman spectroscopy and show tunable optical band gaps by photoluminescence measurements that they are detected different intensity and position, respectively. This study will attract us to discuss tunable band gap engineering applications that we have enlightened with continuous TMDC alloy. |
E-mail |
yoobeen@sookmyung.ac.kr |
|