|
|
| Type |
Poster Presentation |
| Area |
무기화학 |
| Room No. |
포스터발표장 |
| Time |
4월 21일 (금요일) 13:00~14:30 |
| Code |
INOR.P-70 |
| Subject |
Thermal electric properties of solution processed antimony-doped tin oxide thin film |
| Authors |
김다인, 김현성*
부경대학교 화학과, Korea
|
| Abstract |
Antimony-doped tin oxide (ATO) nanoparticles with various doping amount of antimony were prepared by solvothermal synthesis. And ATO thin film was fabricated on the glass substrate by spin coating ATO nanoparticles solution. Importantly, these obtained thin films can be annealed at temperature (Ta) from 300 ºC to 500 ºC and afford devices with excellent thermal electrical characteristics. Optimized doping amount of antimony of 1 mol % and Ta= 300 ºC afford ATO thin film exhibiting Seebeck coefficient(S). Remarkably, ATO thin film processed at 500 ºC still exhibit power factor (S2•σ)> 64.4μW/m∙K2, which is encouraging for solution-processing with inexpensive and easy procedures. |
| E-mail |
kdi2552@naver.com |
|
119th General Meeting of the KCS