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| Type |
Poster Presentation |
| Area |
재료화학 |
| Room No. |
포스터발표장 |
| Time |
4월 21일 (금요일) 13:00~14:30 |
| Code |
MAT.P-353 |
| Subject |
Synthesis and thermoelectrical properties of
Sulfur-doped CuBi2O4
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| Authors |
이다희, 한미경1, 김성진2,*
이화여자대학교 화학나노과학과, Korea
1이화여자대학교 화학나노과학부, Korea
2이화여자대학교 화학과, Korea
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| Abstract |
Thermoelectric materials attract vast attention due to the present energetic and environmental needs for new potential renewable energy source. The dimensionless figure of merit, ZT, is the key parameter that defines the efficiency of thermoelectric materials. The ZT value, (S2σ/κ)T, is derived from thermal conductivity (κ), electrical conductivity (σ) and Seebeck coefficient (S) with Temperature T.
Thermoelectric oxides have been widely investigated over the past decades owing to their nontoxicity, low cost, and thermal and chemical stability in air. Among the various kinds of thermoelectric oxide materials, spinel CuBi2O4 is a promising new oxide thermoelectric material with band gap of 1.5-1.8 eV.
In this study, CuBi2O4 was synthesized through solid state reaction. Sulfur-doped CuBi2O4 was prepared by sulfurization using CS2 gas. Comparative investigations of the CuBi2O4 and sulfur-doped CuBi2O4 system were performed to have a better understanding for the effect of sulfurization of CuBi2O4 on the thermoelectric properties. The crystal structure and thermoelectric properties such as Seebeck coefficient and thermal conductivity of prepared samples were measured with X-ray diffraction, ZEM-3 equipment (Ulvac-Riko), and NETZSCH LFA 457 MicroFlash™. The X-ray diffraction data indicates that the structure of CuBi2O4 was remained after the substitution of sulfur. The ZT value of sulfur-doped CuBi2O4 was 1.4*10-3 at 400K. The substitution of O site by S provides possible directions toward the enhancement of the thermoelectric figure of merit of oxide materials with low electrical conductivity.
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| E-mail |
daheelee1@gmail.com |
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119th General Meeting of the KCS