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| Type |
Poster Presentation |
| Area |
고분자화학 |
| Room No. |
포스터발표장 |
| Time |
4월 21일 (금요일) 13:00~14:30 |
| Code |
POLY.P-18 |
| Subject |
Synthesis and Thin Film Properties of A 4-(1,2,2-trifluorovinyloxy)benzoyl Substituted Polyimide for Gate Insulator in Thin Film Transistor |
| Authors |
기경민, 안택*
경성대학교 화학과, Korea
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| Abstract |
The hydroxyl group containing polyimide (6FDA-HAB) was successfully synthesized with a simple one step condensation polymerization of the monomers 5,5'-(perfluoropropane-2,2-diyl) diisobenzofuran-1,3-dione (6FDA) and 3,3’-dihydroxy-4,4’-diaminobiphenyl (HAB). And then, the hydroxyl groups of polyimide (6FDA-HAB) were further reacted with 4-(1,2,2-trifluorovinyloxy)benzoyl chloride (TFVOB) using N-methylpyrrolidone (NMP) as solvent and trimethyl amine as base. A synthesized novel polyimide (6FDA-HAB-TFVOB) was fully soluble in common organic solvents and side chains of polyimides are easily connected into the hexafluorocylobutane form by simple thermal treatment. Thin film properties of a novel crosslinked polymide (6FDA-HAB-TFVOB) were systematically investigated such as chemical structures, surface roughness, surface morphology, surface energy and capacitance, etc. The pentacene thin film transistor with crosslinked 6FDA-HAB-TFVOB as a gate insulator showed a field effect mobility as 0.25 cm2/Vs with almost no hysteresis behavior. |
| E-mail |
kmki1216@naver.com |
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119th General Meeting of the KCS