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| Type |
Poster Presentation |
| Area |
고분자화학 |
| Room No. |
포스터발표장 |
| Time |
4월 21일 (금요일) 13:00~14:30 |
| Code |
POLY.P-19 |
| Subject |
Synthesis and Thin Film Properties of Novel Crosslinked Polyimide Gate Insulators for Thin Film Transistor with Ultra-Low Leakage Current Density |
| Authors |
기경민, 안택*
경성대학교 화학과, Korea
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| Abstract |
The hydroxyl group containing polyimides (6FDA-6FHAB and DOCDA-6FHAB) were successfully synthesized with a simple one step condensation polymerization using the monomers, 5,5'-(perfluoropropane-2,2-diyl)diisobenzofuran-1,3-dione (6FDA), 5-(2,5-dioxytetrahydrofuryl)3-methly-3-cylohexene-1-2-dicarboxylic anhydride (DOCDA), and 5,5'-(perfluoro propane-2,2-diyl)bis(2-aminophenol) (6FHAB). Synthesized polyimides (6FDA-6FHAB and DOCDA-6FHAB) were further crosslinked with a poly(melamine-co-formaldehyde) as cross-linking agent. Thin film properties of novel crosslinked polyimides were systematically characterized such as chemical structures, surface roughness, surface energy, thermal stability, and capacitance, etc. Thin films of the crosslinked 6FDA-6FHAB and DOCDA-6FHAB showed good surface roughness as root mean square (rms) value as about 0.133 and 0.229 nm in AFM measurement. In addition, both crosslinked polyimide films showed extremely low leakage current densities in metal-insulator-metal (MIM) devices. The leakage current densities and breakdown voltages of crosslinked-6FDA-6FHAB and crosslinked-DOCDA-6FHAB were found to be less than 1x10-10 A/cm2 at 90 V and above 3MV/cm. Detailed synthetic routes of hydroxyl group containing polyimides and conditions of crosslinking process will be presented.
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| E-mail |
kmki1216@naver.com |
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119th General Meeting of the KCS