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| Type |
Poster Presentation |
| Area |
재료화학 |
| Room No. |
포스터발표장 |
| Time |
4월 21일 (금요일) 13:00~14:30 |
| Code |
MAT.P-376 |
| Subject |
Two-Dimensional Structure of Germanium Arsenide |
| Authors |
차승환, 박정희1,*, 차은희2,*
호서대학교 그린에너지공학과, Korea
1고려대학교 소재화학과, Korea
2호서대학교 제약공학과, Korea
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| Abstract |
The recent discovery of graphene has given rise to significant interest in searching for new two-dimensional (2D) materials with their three-dimensional prototypes, where the 2D layers are stacked with weak van der Waals interactions. One of remarkable properties of the 2D nanostructures is their unique quantum confinement effect at the 2D limit. In the present work, we synthesized the germanium arsenide nanosheets using the exfoliation of bulk crystals that were synthesized by Bridgeman melt-growth method. Bulk GeAs is found to have a band gap (Eg) of ~1 eV, while the GeAs monolayer has been predicted to have Eg = 2.1 eV. We fabricated the Si/GeAs core/shell nanowire array that acts as a photoelectrode in the solar-driven water-splitting reaction, and observed the higher photocurrent with decreasing the layer thickness. First-principles calculations predicted the band alignment between Si and GeAs, and the higher photocurrent for the GeAs monolayers relative to that of the bulk. |
| E-mail |
rbbr1023@naver.com |
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119th General Meeting of the KCS