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| Type |
Poster Presentation |
| Area |
Material Chemistry |
| Room No. |
Exhibition Hall 2+3 |
| Time |
10월 19일 (목요일) 11:00~12:30 |
| Code |
MAT.P-412 |
| Subject |
Transition Metal diethyldithiocarbamate for solution synthesis of CIGS thin film photovoltaic cells |
| Authors |
HyunJong Lee, Duk-Young Jung*, Seonho Jung, Ji-Hyun Cha
Department of Chemistry, Sungkyunkwan University, Korea
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| Abstract |
Precursors of Cu, In, Ga diethyldithiocarbamate(ddtc) were prepared and deposited on glass substrate by spin coating method for fabrication of CIGS thin film. Cu, In and Ga ddtc compounds were synthesized separately by using CuCl2, InCl3, Ga(NO3)3 and Naddtc in aqueous solution. The crystallinity of these precursors was confirmed by XRD and coordination between metal and ligand was observed by FT-IR measurements. Dichloromethane was used to solve these compounds and black solution was obtained. The thin film was prepared by spin coating. Precursors on the film vaporized after annealing at 200℃, so we chose another method to observe synthesis of CIGS thin film. The mixture of solid phase as ratio (Cu:In:Ga) 3:2:1 was deposited on glass substrate at 450℃. Each thin film was measured by SEM and EDS to analyze thickness and chemical composition. TGA was utilized to analyze melting point of precursors and mixture of all precursors to investigate the opimal reaction condition for synthesis of CIGS thin films of photovoltaic cells. |
| E-mail |
hyunjo109@naver.com |
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120th General Meeting of the KCS