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| Type |
Poster Presentation |
| Area |
Material Chemistry |
| Room No. |
Exhibition Hall 2+3 |
| Time |
10월 19일 (목요일) 11:00~12:30 |
| Code |
MAT.P-420 |
| Subject |
Composition Tuned (GaAs)1-x(Ga2Se3)x Ternary Alloy Nanowires |
| Authors |
JinHa Lee, jeunghee park1,*
Micro Device Engineering / Semiconductor Device, Korea University, Korea
1Department of Materials Chemistry, Korea University, Korea
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| Abstract |
Multicomponent nanowires (NWs) are of great interest for integrated nanoscale optoelectronic devices owing to their widely tunable band gaps. In this study, we synthesize a series of (GaAs)1-x(Ga2Se3)x ternary composition alloy nanowires using the vapor transport method. The formation of a cubic (zinc blende) phase solid solution at the composition range of x = 0 - 1 allowed the tuning of the band gap (1.4–2.0 eV). Pure GaAs NWs were synthesized with [111] growth direction using a hydrogen gas flow during the growth. As the Ga2Se3 incorporated during the growth under H2 flow, the NW becomes defect-free single-crystalline and their growth direction is converted homogeneously into [110]. The Ga vacancies of Ga2Se3 along the [110] direction may also contribute to produce the uniform growth direction of NW. The incorporation of Se into the GaAs nanowires induces higher photo-sensitivity and lower dark current, which opens up a new strategy for enhancing the performance of photodetectors. |
| E-mail |
jh8972@naver.com |
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120th General Meeting of the KCS