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| Type |
Poster Presentation |
| Area |
Electrochemistry |
| Room No. |
Exhibition Hall 2+3 |
| Time |
10월 20일 (금요일) 13:00~14:30 |
| Code |
ELEC.P-468 |
| Subject |
Cobalt silicide nanowires based high-performance microsupercapacitors |
| Authors |
Hana Yoon*, Bongsoo Kim1,*
Separation and Conversion Materials Research, Korea Institute of Energy Research, Korea
1Department of Chemistry, Korea Advanced Institute of Science and Technology, Korea
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| Abstract |
The effectiveness of cobalt silicide nanowires grown on silicon substrate by chemical vapor deposition method as electrode material for micro-supercapacitors has been investigated. The as-synthesized cobalt silicide nanowires densely cover the silicon substrate and have small diameters of 40-70 nm. They showed the crystal structures and chemical composition of cobalt-rich silicides (Co3Si, Co2Si). Electrochemical measurements showed that the cobalt silicide nanowires exhibit high areal capacitance and good rate capability. The cobalt silicide nanowires grown on silicon substrates present many advantages for supercapacitor application, including high surface area, low resistivity, and good mechanical adhesion with the silicon substrate showing great promise for applications in micro-supercapacitors. |
| E-mail |
hanayoon@kier.re.kr |
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120th General Meeting of the KCS