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| Type |
Symposium |
| Area |
[Inorganic Chemistry - Materials Chemistry Divisions Joint Symposium] Molecules and Materials for Safe and Sustainable Future |
| Room No. |
Room 211+212+213 |
| Time |
THU 15:00-: |
| Code |
IOMT-4 |
| Subject |
Large-Area Growth of High Quality Hexagonal Boron Nitride Chemical Vapor Deposition and Its Applications |
| Authors |
Hyeon Suk Shin
Department of Chemistry, Ulsan National Institute of Science and Technology, Korea |
| Abstract |
Large-scale growth of high-quality hexagonal boron nitride (h-BN) has been a challenge in two-dimensional (2D)-material-based electronics. In this presentation, I demonstrate wafer-scale and wrinkle-free epitaxial growth of multi-layer h-BN on a sapphire substrate by using high-temperature and low-pressure chemical vapor deposition.[1] Microscopic and spectroscopic investigations and theoretical calculations reveal that synthesized h-BN has a single rotational orientation with Bernal stacking order. A facile method for transferring h-BN onto other target substrates were developed, which provides the opportunity for using h-BN as a substrate in practical electronic circuits. A graphene field effect transistor fabricated on our h-BN sheets shows highly improved carrier mobility, because the ultra-flatness of the h-BN surface can reduce the substrate-induced degradation of the carrier mobility of 2D materials. Afterwards, I show some potential applications of h-BN for a shell layer capping Au nanoparticles in surface-enhance Raman scattering [2], an encapsulation (or passivation) layer to protect unstable transition metal dichalcogenides (TMDs) [3], and a proton exchange membrane to replace the Nafion film in a polymer electrolyte membrane (PEM) fuel cell. |
| E-mail |
shin@unist.ac.kr |
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120th General Meeting of the KCS