121st General Meeting of the KCS

Type Poster Presentation
Area Material Chemistry
Room No. Event Hall
Time 4월 20일 (금요일) 11:00~12:30
Code MAT.P-326
Subject Fabrication of boron doped mesoporous graphene with controlled boron configuration
Authors Rosalynn Nankya, Jihye Lee, Hyun Jung*
Department of Chemistry, Dongguk University, Korea
Abstract Boron doped mesoporous graphene (BMG) was synthesized via hydrothermal process (BMG-h) and followed by heat treatment to one of the samples (BMG-c) in order to control the porous structure and the boron configurations (BCO2 and BC2O) in mesoporous graphene (MG). The structural and composition were investigated by XRD, Raman and XPS and porosity analysis was done by nitrogen sorption analysis. The amount of incorporated boron was 11.51 wt% and 12.93 wt% for BMG-c and BMG-h respectively. With heat treatment, there was increase in specific surface area and decrease in oxygen functional groups. The materials obtained have a high surface area of up to 1284 m2g-1 for BMG-c and 997 m2g-1 for BMG-h. The suitable arrangement of boron atoms in MG greatly influences the electrical properties of BMG. Herein, sintering was introduced to one of the samples leading to specific controlled boron configurations. The BC2O increased with sintering while BCO2 decreased due to removal of oxygen functional groups near the boron atoms and substitution incorporation of boron in MG is enhanced at high temperature. Therefore, BC2O was more dominant in BMG-c while BCO2 in BMG-h. We successfully controlled specific surface area and configuration of boron in BMG. It is worth noting that specific capacitance is mainly affected by electrical conductivity and specific surface area of the electrode. Based on these results, we utilized the condition of boron doping in various application such as lithium batteries supercapacitor electrodes.
E-mail rosalynn34@gmail.com