121st General Meeting of the KCS

Type Poster Presentation
Area Material Chemistry
Room No. Event Hall
Time 4월 20일 (금요일) 11:00~12:30
Code MAT.P-341
Subject Atomic layer deposition of copper oxide (Cu2O) thin films by Cu(DMAMB)2 precursor and H2O
Authors SEUNGMIN YEO, Chang-Gyoun Kim, Bo Keun Park, TAEK-MO CHUNG*
Center for Thin Film Materials, Korea Research Institute of Chemical Technology, Korea
Abstract Copper oxide (Cu2O) thin films have been deposited by atomic layer deposition (ALD) using bis(1-dimethylamino-2-methyl-2-butoxy)copper (C14H32N2O2Cu) and water vapor (H2O) as precursor and reactant, respectively. Several ex-situ characterizations like X-ray diffractometry (XRD), X-ray photoelectron spectroscopy (XPS), and X-ray fluorescence (XRF) were performed in details to study the as-grown Cu2O film on SiO2/Si substrate. All the analysis results clearly showed that polycrystalline with cubic structure and pure with negligible C impurity, and stoichiometric Cu2O thin films were successfully. It was also observed that self-limiting film growth with the growth rate of 0.04 nm/cycle, which was the characteristic of ideal ALD, was observed with both the precursor and reactant pulsing time. The XRD results of the Cu2O film showed specific six peaks corresponding to the cubic Cu2O. The XPS analysis strongly supported that the films deposited with the optimal conditions in thin study mostly consisted of the Cu2O phase, as corresponding to the XRD results. From the Tauc plot, band gap of ALD-Cu2O film was estimated to be ~ 2.3 eV. We believe that this work will apply for the various applications such as TFTs, catalyst, anode material in batteries, etc.
E-mail yeoseung@krict.re.kr