|
Type |
Poster Presentation |
Area |
Inorganic Chemistry |
Room No. |
Event Hall |
Time |
4월 19일 (목요일) 11:00~12:30 |
Code |
INOR.P-50 |
Subject |
Synthesis of novel group 4 transition metal complexes |
Authors |
GAYEON LEE, Bo Keun Park, Chang-Gyoun Kim1, TAEK-MO CHUNG2,* Center for Thin Film Materials, Korea Research Institute of Chemical Technology, Korea 1Chemical Materials Division, Korea Research Institute of Chemical Technology, Korea 2Chemical Materials Division Center for Thin Film M, Korea Research Institute of Chemical Technology, Korea |
Abstract |
In the case of dynamic random access memory (DRAM), capacitor dielectrics have required new dielectric materials with a higher k-value than that of traditional SiO2. HfO2 and ZrO2 have been extensively investigated as the gate dielectric oxide or the capacitor dielectrics.
In this work, novel group 4 metal complexes containing amino-alkoxide as stabilizing ligands, were successfully synthesized.
The newly synthesized compounds were characterized by FTIR and NMR spectroscopy as well as elemental and thermogravimetric (TG) analysis. The molecular structures of compounds were inspected by single crystal X-ray diffraction, that they crystalized in the monoclinic space group P2(1)/n as monomer. |
E-mail |
lgy131@naver.com |
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