|
Type |
Poster Presentation |
Area |
Inorganic Chemistry |
Room No. |
Event Hall |
Time |
4월 19일 (목요일) 11:00~12:30 |
Code |
INOR.P-55 |
Subject |
Synthesis of manganese nitride precursors |
Authors |
SUN JU LEE, Bo Keun Park1,*, TAEK-MO CHUNG2,*, Chang-Gyoun Kim3 Center for Thin Film Materials, Kora Research institue of Chemical Technology, Korea 1Center for Thin Film Materials, Korea Research Institute of Chemical Technology, Korea 2Chemical Materials Division Center for Thin Film M, Korea Research Institute of Chemical Technology, Korea 3Chemical Materials Division, Korea Research Institute of Chemical Technology, Korea |
Abstract |
Manganese nitride can be used for various applications such as catalyst, battery, memory device, display and sensors. Manganese nitride flims are deposited by several methods such as chemical vapor deposition (CVD), atomic layer deposition (ALD), or physical vapor deposition. Especially, ALD method is useful to make thin films to use metal precursor (organometallic compound) having high volatility, thermal stability and high reactivity with reactants. Precursors for manganese nitride thin film are Mn(amidinate)2, Mn(guanidinate)2, Mn(β-diketiminate)2, etc. However, the precursors have some issue such as volatility, thermal stability, and reactivity.
Herein, we report the synthesis of new heteroleptic precursors containing aminoalkoxide for thin films containing manganese. Prepared compounds were fully characterized by IR, thermogravimetric analyses (TGA), microanalyses, and structural analysis through single-crystal X-ray diffraction study. |
E-mail |
dltjswn203@naver.com |
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