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|
| Type |
Poster Presentation |
| Area |
Physical Chemistry |
| Room No. |
Event Hall |
| Time |
4월 20일 (금요일) 11:00~12:30 |
| Code |
PHYS.P-91 |
| Subject |
TOF SIMS analysis of Au nanoparticles on Si wafer: the effect of the pre-annealing, and the gas cluster ion beam sputtering conditions |
| Authors |
IL HEE KIM, Chang Min Choi1,*, Young Dok Kim*
Department of Chemistry, Sungkyunkwan University, Korea
1Korea Basic Science Institute, Korea
|
| Abstract |
In this work, sputtering and analysis of gold nanoparticle deposited on Si wafer with APTES (3-aminopropyltryethoxysilane) was conducted by using TOF SIMS (time-of-flight secondary ion mass spectrometer) with Bi3+ cluster as a primary ion and Ar1000+ for surface etching. The samples were annealed at 100, and 300 oC before the TOF SIMS analysis, and the effect of annealing on the metal-support interaction was studied. Substantial difference in the SIMS spectra combined with 30 cycle of depth profiling were observed: for sample which was not annealed, bare Au cluster cations, and Si+ were observed, whereas for annealed samples, additional AuSi+ cluster was observed. This result can be interpreted in terms of Au-silicide was formed upon pre-annealing process. We suggest that SIMS experiments using cluster ions such as Bi3+ can not only be used for surface elemental analyses, but also provide information on local chemical environments of elements on the surface, and the interaction between the elements which is an important information in heterogeneous catalysis. We also highlight that with soft condition of depth profiling analysis, the chemical environment and the interaction between elements on the surface can be analyzed and understood without significant distortion of the original structures. |
| E-mail |
ilheek312@gmail.com |
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121st General Meeting of the KCS