121st General Meeting of the KCS

Type Poster Presentation
Area Material Chemistry
Room No. Event Hall
Time 4월 20일 (금요일) 11:00~12:30
Code MAT.P-378
Subject Wafer-scale single-domain-like graphene with enhanced electronic transport properties by defect-selective atomic layer deposition of hexagonal ZnO
Authors Jinwon Jung, Myong Mo Sung*
Department of Chemistry, Hanyang University, Korea
Abstract Large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain numerous grain boundaries that can greatly degrade their performance and produce inhomogeneous properties. A better grain boundary engineering in CVD graphene is essential to realize the full potential of graphene in large-scale applications. Here, we used atomic layer deposition (ALD) technique to deposit ZnO selectively on grain boundaries of the CVD graphene so as to depress the highly resistive effect of the grain boundaries. The ZnO ALD / Graphene film showed the electrical properties—a sheet resistance of 68 Ω/□, a field effect mobility of 7,460 and 2,610 cm2·V-1·s-1 for hole and for electron, respectively. A defect-selective atomic layer deposition (ALD) for stitching grain boundaries of CVD graphene with conductive ZnO so as to increase the connectivity between grains. In the present ALD process, ZnO with a hexagonal wurtzite structure was selectively grown mainly on the defect-rich grain boundaries to produce ZnO-stitched CVD graphene with well-connected grains. For the CVD graphene film after ZnO stitching, the inter-grain mobility is notably improved with only a little change in the free carrier density. We also demonstrate how ZnO-stitched CVD graphene can be successfully integrated into wafer-scale arrays of top-gated field-effect transistors on 4-inch Si and polymer substrates, revealing remarkable device-to-device uniformity.
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