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|
| Type |
Poster Presentation |
| Area |
Material Chemistry |
| Room No. |
Event Hall |
| Time |
4월 20일 (금요일) 11:00~12:30 |
| Code |
MAT.P-387 |
| Subject |
Atomic layer deposition of ZnO with high conductivity and stability using in situ UV illumination |
| Authors |
Hongrho Yoon, Myong Mo Sung*
Department of Chemistry, Hanyang University, Korea
|
| Abstract |
Compounds of ZnO is very attractive compound semiconductors due to their wide band gap (~3.3eV) characteristics and large exciton binding energy (60meV). However, ZnO preparing by low temperature atomic layer deposition (ALD) has low conductivity. Here, we report the highly transparent, and highly conductive air-stable thin film of ZnO using ALD at low temperature under in situ UV irradiation of the growing film. X-ray photoelectron spectroscopy (XPS) was used to reveal that the UV irradiation generates oxygen vacancies, partially removes O–H bonds, and thereby improves the electrical conductivity. Thus, the in situ UV irradiated ZnO film shows an electrical resistivity of 5.5 × 10-4 Ω cm, compairing to 0.25 Ω cm resistivity of the pristine ZnO film, and an optical transparency of nearly 90%. In addition, even on prolonged exposure of the film to air, it maintains high stability and conductivity against the degradation of the electrical conductivity. |
| E-mail |
pwaww93@naver.com |
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121st General Meeting of the KCS