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|
| Type |
Poster Presentation |
| Area |
Material Chemistry |
| Room No. |
Event Hall |
| Time |
4월 20일 (금요일) 11:00~12:30 |
| Code |
MAT.P-388 |
| Subject |
HIgh Performance and Environmental Stable of ALD Grown Organic Doped ZnO |
| Authors |
HongBum Kim, Sung Ho Yu1, Myong Mo Sung*
Department of Chemistry, Hanyang University, Korea
1Hanyang University, Korea
|
| Abstract |
We fabricate zinc oxide thin-film transistors (TFTs) using 4-mercaptophenol (4MP) doped atomic layer deposition (ALD) grown ZnO that results in highly stable and high performance. The 4MP concentration in ZnO films were varied from 1.7% to 5.6% by controlling Zn:4MP pulses. The n-type carrier concentrations in ZnO thin films were controlled from 1.017×1020/cm3 to 2.903×1014/cm3 with appropriate amount of 4MP doping. The 4.8% 4MP doped ZnO TFT revealed good device mobility performance of 8.4 cm2/Vs and the on/off current ratio of 106. Such 4MP doped ZnO TFTs exhibited relatively good stability (ΔVTH : 0.4 V) under positive bias-temperature stress while the TFTs with only ZnO showed a 4.3 ΔVTH shift, respectively. |
| E-mail |
athra419@hanmail.net |
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121st General Meeting of the KCS