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| Type |
Poster Presentation |
| Area |
Material Chemistry |
| Room No. |
Event Hall |
| Time |
4월 20일 (금요일) 11:00~12:30 |
| Code |
MAT.P-414 |
| Subject |
Al2O3 Thin Film Fabrication by UV light assisted Atomic Layer Deposition |
| Authors |
Gyusang Yi, Myong Mo Sung*
Department of Chemistry, Hanyang University, Korea
|
| Abstract |
We have performed Al2O3 thin film deposition at room temperature by UV-enhanced atomic layer deposition on poly(ethylene terephthalate) (PET) substrates. We have used trimethylaluminum (TMA) for metal source and H2O for oxygen source pulsed with UV irradiation. The atomic layer deposition depends on alternate pulsing of the precursor gases onto the substrate surface followed by chemisorption of the precursors onto surface. In general cases, the surface reactions of the atomic layer deposition are not completed at low temperature.
In this experiment, the reactions were found to be self-limiting surface reaction and to yield uniform and conformal Al2O3 thin films by using UV irradiation at room temperature. The UV light was very effecvitve to get the high quality Al2O3thin films without any defect on polymer substrate. The thickness, density, morphology and electrical property of the Al2O3 thin films were measured by AFM, XRR, ellipsometry, and C-V measurement.
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| E-mail |
yks911215@naver.com |
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121st General Meeting of the KCS