|
|
| Type |
Poster Presentation |
| Area |
Material Chemistry |
| Room No. |
Event Hall |
| Time |
4월 20일 (금요일) 11:00~12:30 |
| Code |
MAT.P-421 |
| Subject |
Two-Dimensional GeAs and GeP via Liquid Phase Exfoliation
|
| Authors |
KIM DOYEON, jeunghee park*, Kidong Park1, InHye Kwak1, JinHa Lee2, Kwon Ik Seon1
Department of Materials Chemistry, Korea University, Korea
1Micro Device Engineering / Microdevices, Korea University, Korea
2Micro Device Engineering / Semiconductor Device, Korea University, Korea
|
| Abstract |
Two-dimensional (2D) layered structures have recently drawn worldwide attention because of their intriguing optical and electrical properties. In this study, we prepared GeAs and GeP nanosheets as a new 2D material by a liquid-phase exfoliation method. The few-layered nanosheets had a band gap close to 2.1 eV, which is significantly higher (by about 1.5 eV) compared to the bulk. The value of 2.1 eV is in excellent agreement with that for the monolayer obtained from first-principles (HSE-06) calculations. The electrical properties of individual nanosheets were measured to reveal the 2D carrier transport behaviors. The measured electrical properties showed that the GeAs and GeP are p-type semiconductors with a hole mobility of about 5 cm2 V-1 s-1. We also observed large photocurrents under visible light irradiation, indicating potential application in high-performance optoelectronic nanodevices. |
| E-mail |
batab2@naver.com |
|
121st General Meeting of the KCS