|
Type |
Poster Presentation |
Area |
Inorganic Chemistry |
Room No. |
Event Hall |
Time |
4월 19일 (목요일) 11:00~12:30 |
Code |
INOR.P-132 |
Subject |
Bent copper sulfide nanoplates with hetero-epitaxially grown ternary phase |
Authors |
Sunghyun Lim, Taehyun Kwon1, Kwangyeol Lee1,* Chemistry, Korea University, Korea 1Department of Chemistry, Korea University, Korea |
Abstract |
Nanostructured semiconductors are known to have unique properties depending on their size, phase and morphology. For this reason, synthetic design to prepare nanocrystals with well-defined morphology and size have received enormous interests in past few decades. Also, more advanced nanostructure design could be achieved by exploiting cation exchange, hetero-epitaxial growth, galvanic exchange, etc. Herein, the hetero-epitaxial growth of ternary sulfide on copper sulfide nanoplate will be reported. The hetero-phase nanoplate bends, in order to relieve lattice strain derived from lattice mismatch between copper sulfide and hetero-epitaxially grown ternary sulfide. |
E-mail |
ish6734@naver.com |
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