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|
| Type |
Poster Presentation |
| Area |
Material Chemistry |
| Room No. |
Event Hall |
| Time |
4월 20일 (금요일) 11:00~12:30 |
| Code |
MAT.P-440 |
| Subject |
A n-doping method to non-destructive and precise control of electronic properties via atomic layer deposition |
| Authors |
Jongchan Kim, Myong Mo Sung*
Department of Chemistry, Hanyang University, Korea
|
| Abstract |
To enhance versatility of graphene, controlling Fermi level and carrier concentration of state of art is needed. In this context, practical approach has archived n-doping technique using atomic layer deposition(ALD) of zinc oxide film on graphene through reactive molecular layer. The technique has benefits for precise and simple, even quite simple and, the produced ZnO thin film on graphene are uniform, conformal, of good quality with a low pinhole density, besides thickness control of 1 Å resolution available. Of this result, characterization of graphene transistor did at the point of carrier density, doping state and Dirac point as a function of the thin film thickness. Not only the superb electronic properties, however also durable operation has promised. Because ZnO thin film act as an effective barrier against air-borne water and oxygen on the graphene. Additionally, ZnO ALD tried to be applied to the other 2D materials like MoS2 and WSe2 those are candidates to promote electron mobility. |
| E-mail |
rensmoo@gmail.com |
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121st General Meeting of the KCS