121st General Meeting of the KCS

Type Poster Presentation
Area Material Chemistry
Room No. Event Hall
Time 4월 20일 (금요일) 11:00~12:30
Code MAT.P-444
Subject The behavior of metal-insulator phase transition of VO2 film tuned by thickness control of precursor coating
Authors Seong Cheol Hong, Myeongsoon Lee, Don Kim*
Department of Chemistry, Pukyong National University, Korea
Abstract The phase transition of the VO2 film near room temperature has attracted many researchers interest for the application of the smart window. There have been several reports to modulate the transition of VO2; The most dramatic case is doping of W6+ in the VO2 lattice (V1-xWxO2 (0≤ x ≤ ~ 0.04), the doping can depress the transition temperature down to ~270 K. The transition temperature also can be adjusted by the control of oxidation state of V ions in the lattice. In this presentation, we showed the behavior of metal insulator transition of VO2 film could be altered by the thickness of the film. The electrical resistance and infrared transmittance measurements of the films in the range of 300 K – 366 K showed the insulator to metal transition of the VO2 phase transition at ~ 340 K. However, the transition behavior observed in transmittance measurement showed much clearer than observed in resistance measurement - wide and clear transition hysteresis, and the transition gap between the high temperature and low temperature phase. Other physical and chemical properties of the films will be discussed also.
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