121st General Meeting of the KCS

Type Poster Presentation
Area Material Chemistry
Room No. Event Hall
Time 4월 20일 (금요일) 11:00~12:30
Code MAT.P-483
Subject Application of single-crystal Poly(3-hexylthiophene) (P3HT) Organic Field Effect Transistor for fabrication of highly sensitive ammonia gas sensor
Authors Jihee Hwang, Myong Mo Sung1,*
Department of chemistry, Hanyang University, Korea
1Department of Chemistry, Hanyang University, Korea
Abstract Ammonia is very hazardous and toxic chemical material that should be retained below its threshold concentrations. Detecting ammonia gas is very important for environmental industry field in nowadays. In this paper, Poly(3-hexylthiophene) (P3HT) was used to fabricate OFET due to low-cost, mass production of lightweight, and flexibility. Single-crystal Poly(3-hexylthiophene) (P3HT) Organic Field Effect Transistor was applied to fabricate a highly sensitive ammonia gas sensor. The range of ammonia gas sensor single-crystal Poly(3-hexylthiophene) (P3HT) Organic Field Effect Transistor was generated from 0.01 to 25 ppm. An array of single-crystal poly(3-hexylthiophene) (P3HT) nanowires were used as organic semiconductor(OSC) layer, of an OFET with a top-contact geometry. Several characteristics of an ammonia gas sensor were improved. Firstly, The electrical properties (on/off current ratio, field-effect mobility) were significantly enhanced as about two orders of magnitude greater than those of same P3HT thin film OFET with same geometry. Secondly, the sensitivity of an ammonia gas sensor was improved around three times higher than that of the P3HT thin film OFET at the 25ppm ammonia concentration. The relative humidity in a range from 45 to 100% did not effect on the ammonia response. In addition, the ammonia sensor response of the OFET showed reversibility. The single crystal nature and high surface/volume ratio of the P3HT contributed to high sensitivity of ammonia.
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