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| Type |
Poster Presentation |
| Area |
Material Chemistry |
| Room No. |
Event Hall |
| Time |
4월 20일 (금요일) 11:00~12:30 |
| Code |
MAT.P-485 |
| Subject |
High Thermoelectric Performance of Hole-doped Polycrystalline Sn1-xPbxSe |
| Authors |
YongKyu Lee, CHUNG IN*
Division of Chemical & Biological Engineering, Seoul National University, Korea
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| Abstract |
Thermoelectric power generation becomes viable technology for environmentally benign and cost-effective conversion of waste heat into electricity. A single crystalline form of p-type SnSe has been reported to show an extraordinarily high thermoelectric figure of merit ZT of ~2.6 at 923 K along the crystallographic b-axis due to its ultralow thermal conductivity. Afterwards, polycrystalline counterparts have been intensively explored because of their facile processability and prospect for large scale applications. However, polycrystalline SnSe materials perform much inferior to their single crystals and hence developing new strategies of enhancing their ZTs is highly desirable for their practical applications. In this presentation, we discuss the effect of Pb alloying and Na doping on the thermoelectric properties of p-type SnSe. We demonstrate that a delicate control of the Pb alloying fraction in SnSe coupled with the optimal level of the carrier concentration improves electrical conductivity and Seebeck coefficient by tuning its phase change temperature and simultaneously lowers lattice thermal conductivity by alloy scattering at 773 K. Such a synergistic role of Pb alloying for the power factor and the lattice thermal conductivity enables a significantly high ZT of 1.2 at 773 K. To better understand the origin of its enhanced thermoelectric performance, the results of atomic resolution spherical-aberration corrected scanning transmission electron microscopic studies will be given.
Ref) J. Am. Chem. Soc. 139, 31, 10887-10896
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| E-mail |
jihwaja88@snu.ac.kr |
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121st General Meeting of the KCS