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|
| Type |
Poster Presentation |
| Area |
Material Chemistry |
| Room No. |
Event Hall |
| Time |
4월 20일 (금요일) 11:00~12:30 |
| Code |
MAT.P-488 |
| Subject |
High thermoelectric performance of new n-type SnSe |
| Authors |
Joonil Cha, CHUNG IN*
Division of Chemical & Biological Engineering, Seoul National University, Korea
|
| Abstract |
SnSe emerges as a new class of thermoelectric materials since its single crystal form exhibits a record high thermoelectric figure of merit ZT. Because thermoelectric devices consist of numerous pairs of n- and p-type TE semiconductors, it is necessary to develop both types of materials with high efficiency. In contrast to p-type SnSe materials, their n-type counterparts have been underdeveloped and perform poorer than the former. Here we present the highest ZT reported to date of ~1.2 for n-type polycrystalline SnSe systems. Importantly, we are able to achieve comparable ZT along the parallel and perpendicular to the press direction of spark plasma sintering despite highly anisotropic layered structure of SnSe by developing different fabrication processes specialized for both the directions. Spherical-aberration corrected scanning transmission electron microscopic studies reveal the presence of a significant amount of edge dislocations and strain fields, contributing to reducing lattice thermal conductivity. |
| E-mail |
gloryji@snu.ac.kr |
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121st General Meeting of the KCS