Tin (II) sulfide (SnS) is a promising candidate to replace current thin film light absorbing materials in photovoltaics. SnS has a moderate band-gap (1.1-1.3 eV) and high absorption coefficient. SnS thin films have been prepared by metal organic chemical vapor deposition (MOCVD) from the reaction of Sn(dmamp)2 and H2S gas as the source materials. The molecular structure of Sn(dmamp)2 is shown in fig. 1. SnS films were deposited on Si and glass substrates at the deposition temperature of 200-400 ℃. Post annealing of SnS thin films was carried out at 400 ℃ for 1 h under the H2S ambient. Hall measurement using van der Pauw method indicate that the film has a p-type conductivity with a hole mobility of 13 cm2/V·s. Raman spectroscopy and x-ray photoelectron spectroscopy results show that SnS thin film has no impurities or other binary phase detected inside the films.