Monolayer molybdenum disulfide (MoS₂) has been drawing large attention as a candidate for next generation nanomaterial owing to its direct bandgap and large exciton binding energy which is suitable for optoelectronic applications such as filed effect transistors and sensors. Chemical vapor deposition (CVD) has been widely used method for the growth of MoS₂, because of its advantages that it can easily gain large scale MoS₂ grains. Despite many advances in growth methods, facile CVD method to prepare monolayer MoS₂ is still developing. In this study, we report the CVD growth of monolayer MoS₂ grain by spin coating molybdenum trioxide (MoO₃) dispersion with sodium cholate as an adhesion promoter to the substrate prior to the growth. The MoO₃-coated substrate was placed on the center of the furnace to grow MoS₂ in the presence of sulfur supplied by argon as carrier gas. By controlling the growth temperature from 650 to 800 ^oC and growth time from 10 to 50 min, we sought to find the best condition for the growth. This method preferentially produced triangular MoS₂ grain whose size, layer number, and excitonic behavior have been characterized by various characterization methods.