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| Type |
Poster Presentation |
| Area |
Inorganic Chemistry |
| Room No. |
Event Hall |
| Time |
4월 19일 (목요일) 11:00~12:30 |
| Code |
INOR.P-215 |
| Subject |
Dual-Color Phosphor-in-Glass for On-Chip Type of Chip-on-Board White LED using a Low-Melting-Point Sn-P-F-O-Based Glass Matrix |
| Authors |
Hee Chang Yoon, HYEONGJIN LEE, JoongHo Lee, soyeon yoon, YOUNG RAG DO*
Department of Chemistry, Kookmin University, Korea
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| Abstract |
We introduce a low-melting-point Sn-P-F-O component type of glass for use as a light-emitting diode (LED) encapsulant which allows processing at a low sintering temperature and in less time (less than 300 °C; one minute) with a typical sintering process. To confirm that the obtained glass materials are chemically bonded, FT-IR, XPS, and EDX analyses demonstrate good interlinkages among the Sn-P-F-O composition. Moreover, physical surveys of the glass encapsulant are evaluated in comparison with Si resin through physical analyses specifically involving the thermal conductivity, actual operating temperature in a chip-on-board (COB) LED, and optical transmittance when exposed to long-term heat radiation. We also fabricate on-chip COB-type pc-WLEDs using green (BaSr)2SiO4:Eu2+ and red (SrCa)AlSiN3:Eu2+ dual-phase phosphors with low-sintering-temperature Sn-P-F-O glass frit. The optical properties of these fabricated single-package WLEDs showed feasible luminous efficacy rates (71.7 – 85.4 lm/W) with external quantum efficiency levels of 26.9 – 32.4%, excellent color rendering indexes (CRIs) (94 – 97), and high special CRIs for strong red (R9, 87 – 99) in a correlated color temperature range of 2700 to 10000 K. In addition, we confirmed the good thermal stability of these glass encapsulant on-chip type COB pc-WLEDs compared to that of the Si encapsulant on-chip type by taking current dependence (up to an applied current of 300 mA) and long-term operating measurements (~200 hrs). |
| E-mail |
pdown123@naver.com |
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121st General Meeting of the KCS