|
Type |
Symposium |
Area |
Recent Research Activities in Solid-State Materials |
Room No. |
Room 323 |
Time |
FRI 09:50-: |
Code |
INOR2-3 |
Subject |
Solution Processing of Scalable Metal-Chalcogenide Semiconductors for Large Area Electronics |
Authors |
Myung-Gil Kim Department of Chemistry, Chung-Ang University, Korea |
Abstract |
In modern daily life, the large area display have been the major information delivery media for internet and broadcasting. Furthermore, as represented by the recent development of high performance thin-film solar cell, ubiquitous sensor array for personal health care, and internet of things, the emerging large area electronics applications requires development of high performance semiconducting materials for emerging applications. Metal chalcogenide have been known as promising materials for electronics and solar cell applications. Although there have been limited success of solution processing of metal chalcogenides, The general strategy for obtaining high-quality, large-area metal chalcogenide semiconductor films from soluble precursors is still under development. In this talk, I will present the recent development of high performance metal chalcogenide semiconductors with soluble molecular precursor and nanomaterials. The optimized TFT device could exhibit a maximum field-effect mobility greater than 300 cm2 V-1 s-1 with an on/off current ratio of > 107 and a good operational stability (threshold voltage shift < 0.5 V at positive gate-bias stress of 10 ks). In addition, metal-chalcogenide-based seven-stage ring oscillators operating at an operating speed of ~2.6 MHz (propagation delay of < 27 ns/stage) was demonstrated. |
E-mail |
myunggil@cau.ac.kr |
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