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| Type |
Poster Presentation |
| Area |
Material Chemistry |
| Room No. |
Grand Ballroom |
| Time |
10월 18일 (목요일) 11:00~12:30 |
| Code |
MAT.P-334 |
| Subject |
Synthesis of Polytypic GaP and GaAs Nanowires and Application as Photodetectors
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| Authors |
Jinha Lee, Kidong Park1, Kim Doyeon2, Jaemin Seo2, Jeunghee Park2,*
Micro Device Engineering / Semiconductor Device, Korea University, Korea
1Micro Device Engineering / Microdevices, Korea University, Korea
2Department of Materials Chemistry, Korea University, Korea
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| Abstract |
One-dimensional semiconductor nanowires often contain polytypic structures owing to the co-existence of different crystal phase. Therefore, the understanding the properties of polytypic structures is of paramount importance for many promising applications in high-performance nanodevice. Herein, we synthesized typical III-V semiconductors, gallium phosphide (GaP) and gallium arsenide (GaAs), nanowires with zinc blende phase using the chemical vapor transport method. The growth direction ([111] and [211]) was controlled by the growth condition such as hydrogen gas flow. Various typed polytypic structures were produced simultaneously in a controlled manner. Nanobeam electron diffraction technique was employed to obtain strain mapping of the nanowires, which visualizes the polytypic structures along the [111] direction. We collected micro-Raman spectrum for individual nanowire, confirming the presence of hexagonal wurtzite phase in the polytypic nanowires. Further, we fabricated photodetectors using single nanowire, showing that the polytypic structures can decrease the photosensitivity. Our systematic analysis provides important insight into polytypic structures of nanowires. |
| E-mail |
jh8972@naver.com |
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122nd General Meeting of the KCS