|
|
| Type |
Poster Presentation |
| Area |
Material Chemistry |
| Room No. |
Grand Ballroom |
| Time |
10월 18일 (목요일) 11:00~12:30 |
| Code |
MAT.P-337 |
| Subject |
Two-Dimensional GeAs with Visible Range Band Gap |
| Authors |
Kim Doyeon, Jeunghee Park*, Jinha Lee1,*, Ik Seon Kwon2,*, InHye Kwak2,*, Kidong Park2,*, SuYoung Lee3,*
Department of Materials Chemistry, Korea University, Korea
1Micro Device Engineering / Semiconductor Device, Korea University, Korea
2Micro Device Engineering / Microdevices, Korea University, Korea
3Deapartment Green Energy Engineering, Hoseo University, Korea
|
| Abstract |
Two-dimensional (2D) layered structures have recently drawn worldwide attention because of their intriguing optical and electrical properties. In this study, we prepared GeAs nanosheets as a new 2D material by a liquid-phase exfoliation method. The few-layered nanosheets had a band gap close to 2.1 eV, which is significantly higher (by about 1.5 eV) compared to the bulk. The value of 2.1 eV is in excellent agreement with that for the monolayer obtained from first-principles (HSE-06) calculations; mono-, bi-, and tri-, and tetralayers have remarkably direct or quasi direct band gap of 2.125, 1.339, 1.112, and 1.017 eV, respectively. The electrical properties of individual GeAs nanosheets were measured to reveal the 2D carrier transport behaviors. We also observed stable and large photocurrents, indicating potential application in high-performance optoelectronic nanodevices. The few-layered GeAs nanosheets deposited on n-type Si nanowire arrays showed promising photoelectrochemical water splitting under visible light irradiation. Band alignment based on the calculated band edge positions suggested a buildup of the space charge region in the p-GeAs/n-Si heterojunction, as well as the band bending of n-Si at the electrolyte interface |
| E-mail |
batab2@naver.com |
|
122nd General Meeting of the KCS