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| Type |
Poster Presentation |
| Area |
Material Chemistry |
| Room No. |
Grand Ballroom |
| Time |
10월 18일 (목요일) 11:00~12:30 |
| Code |
MAT.P-338 |
| Subject |
Strain Mapping of Bent III-V Semiconductor Nanowires |
| Authors |
Jaemin Seo, Jeunghee Park*, Kidong Park1
Department of Materials Chemistry, Korea University, Korea
1Micro Device Engineering / Microdevices, Korea University, Korea
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| Abstract |
Strain engineering of nanowires (NWs) has been recognized as a powerful strategy for tuning the optical and electronic properties of nanoscale semiconductors. Therefore, the characterization of the strains with nanometer-scale spatial resolution is of great importance for various promising applications. In the present work, we synthesized single-crystalline GaN, GaP, and GaAs nanowires using the chemical vapor transport method and visualized their bending strains (up to 3%) with high precision using the nanobeam electron diffraction technique. The strain mapping at all crystallographic axes revealed that maximum strain exists along the growth direction with the tensile and compressive strains at the outer and inner parts, respectively; the opposite strains appeared along the perpendicular direction; the tensile strain was larger than the coexisting compressive strain at all axes. These results are consistent with the mechanical modulus of bulk phase. Our work provides new insight into the bending strain of III-V semiconductors, which is of paramount importance in the performance of flexible or bendable electronics. |
| E-mail |
saysmile99@naver.com |
|
122nd General Meeting of the KCS