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|
| Type |
Poster Presentation |
| Area |
Material Chemistry |
| Room No. |
Grand Ballroom |
| Time |
10월 18일 (목요일) 11:00~12:30 |
| Code |
MAT.P-357 |
| Subject |
Copper-indium and Copper-gallium diethyldithiocarbamate complexes |
| Authors |
HyunJong Lee, Seonho Jung, Ji-Hyun Cha, Duk-Young Jung*
Department of Chemistry, Sungkyunkwan University, Korea
|
| Abstract |
Copper(III) diethyldithiocarbamate(dtc) complexes [Cu(η2-S2CNEt2)2][InCl4] and [Cu(η2-S2CNEt2)2][GaCl4] have been synthesized and characterized as precursors of CIGS thin film. These compounds were synthesized by using Cu(II)-dtc, In(III) chloride and Ga(III) iodide in dichloromethane and ethanol. Particularly, Ga(III) iodide reacts with iodine-chlorine substitution reaction in dichloromethane. Cu(III)(ddtc)2+ cation contain square-planar Cu(III) centres which attain on overall distorted octahedral coordination environment with long range intermolecular interactions between copper-sulfur. In [Cu(η2-S2CNEt2)2][MeCl4] (Me = In, Ga), anions and cations do not interact and both compounds have same crystal packing system. Crystal structures of both compounds have been determined by single-crystal X-ray diffractometer. Modification of molecular system of Cu-dtc was investigated by measurement of IR. TGA was utilized to analyze melting point of them to study the thermal reaction condition for fabrication of CIGS thin films of photovoltaic device |
| E-mail |
hyunjo109@naver.com |
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122nd General Meeting of the KCS