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| Type |
Oral Presentation |
| Area |
Oral Presentation of Young Material Chemists |
| Room No. |
Room 322 |
| Time |
THU 09:28-: |
| Code |
MAT.O-5 |
| Subject |
High Performance Flexible Organic Field Effect Transistor |
| Authors |
Geonho Kim, Jiwon Kim*
School of Integrated Technology, Yonsei University, Korea
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| Abstract |
Recent years, organic based field effect transistor has been actively studied since organic semiconductors are biocompatible, easy to fabricate large area and low in cost.[1] Furthermore, organic semiconductors are flexible compared to conventional semiconductors (such as Si or GaAs etc.); therefore, they are applied in various devices such as wearable devices, robotics, and portable electronics, etc. However, they still suffer from relatively low field effect mobility which is important in transistor performance.
Here, we report high performance flexible organic field effect transistor (OFET) using Li doped poly(3-hexylthiophene-2,5-diyl) (P3HT) as channel, ion gel as gate and Au nanoflakes as electrodes. Li doped P3HT has relatively high carrier density and mobility (up to 1.4 cm2/V∙s),[2] whereas ion gel has high carrier conductivity and high stability in ambient environment. Ion gel is also easy to fabricate nano/micro patterns on large area. Also, Au nanoflakes can be deposited onto flexible substrate maintaining good conductivity upon mechanical deformation. In sum, our flexible organic field effect transistor showed high performances (high mobility, stability, short response time and high ON/OFF ratio) suggesting its potential to be applied in various wearable electronic devices.
Reference
[1] Kim et al. Science advances, 2017, 3.9: e1701114.
[2] Guo et al. Journal of Materials Chemistry A, 2014, 2.34: 13827-13830.
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| E-mail |
geonhokim@yonsei.ac.kr |
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122nd General Meeting of the KCS