123rd General Meeting of the KCS

Type Symposium
Area Material Design and Applications for Artificial Photosynthesis
Room No. Room 405+406
Time FRI 14:55-15:20
Code MAT3-2
Subject Preparation of single crystal metal foils through colossal grain growth and some of their uses
Authors Sunghwan Jin
Center for Multidimensional Carbon Materials, Institute for Basic Science, Korea
Abstract Polycrystalline metals have randomly oriented crystal grains separated by grain boundaries. In contrast, single crystal metals are composed entirely of one crystal grain without any grain boundaries throughout the sample, and as a result, exhibit properties distinct from polycrystalline metals. Until now, commercial single crystal metals are manufactured by bulk crystal growth processes (such as by the Czochralski or Bridgman methods) but these methods lead to expensive single crystal metals. Here, we present a new technology that can inexpensively convert commercial polycrystalline metal foils into single crystal metal foils. By minimizing contact stresses during the annealing of a metal foil, we discovered colossal growth of grains, resulting in a single crystal metal foil having identical orientation in both the in-plane and out-of-plane directions [1]. We will discuss our method to obtain and to analyze such metal foils, and explain a plausible mechanism for this colossal grain growth. We will also show the growth of single crystal mono- and multi-layer graphenes on single crystal metal foils, and better electrical conduction of single crystal metal foils (a 7% reduction in the room-temperature resistivity of single crystal Cu foils compared to polycrystalline Cu foils) as examples of the applications of such single crystal metal foils. We then speculate on other potential uses of single crystal metal foils including at industrial scale. [1] Science, 2018, 362, 1021-1025. Acknowledgements This work was supported by IBS-R019-D1. I thank M. Huang, Y. Kwon, L. Zhang, B. W. Li, S. Oh, J. Dong, D. Luo, M. Biswal, B. V. Cunning, P. V. Bakharev, I. Moon, W. J. Yoo, F. Ding, H. J. Shin, R. S. Ruoff for their great contributions in this work.
E-mail sunghwanjin00@gmail.com, jinsh1@ibs.re.kr