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| Type |
Symposium |
| Area |
Recent Trends in Organometallic Chemistry |
| Room No. |
Room 401+402 |
| Time |
FRI 10:30-10:50 |
| Code |
INOR2-5 |
| Subject |
Development of Metal Precursors and Application to ALD/CVD |
| Authors |
Taek-Mo Chung
Advanced Materials Division, Korea Research Institute of Chemical Technology, Korea |
| Abstract |
We have focused on the development of novel precursors for atomic layer deposition (ALD) and chemical vapor deposition (CVD) for a few decades. To synthesize the desired metal precursors, we adopted the synthetic strategy for the design of organic ligands on the molecular level. From the research works, various organic ligands such as aminoalkoxides and N-alkoxy carboxamides have been synthesized and applied to prepared new metal precursors which exhibit high volatility and thermal stability and are suitable to be applied to thin films deposition by ALD/CVD. They are nickel, copper, ruthenium, and strontium precursors for their applications in memory devices. In addition, new metal precursors such as tin, indium, and gallium complexes have been recently developed for transparent conducting oxides (TCO) and applied to deposit their oxide thin films such as SnO, SnO2, In2O3, and InZnSnOx by ALD and CVD. In this presentation, we will discuss development and application of new metal precursors for ALD/CVD. |
| E-mail |
tmchung@krict.re.kr |
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123rd General Meeting of the KCS