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|
| Type |
Poster Presentation |
| Area |
Material Chemistry |
| Room No. |
Exhibition Hall 2 |
| Time |
4월 19일 (금요일) 11:00~12:30 |
| Code |
MAT.P-444 |
| Subject |
Synthesis of Wide Bandgap GeP Nanosheets and Their Electrical Properties |
| Authors |
Kim Doyeon, Jeunghee Park*, Ik Seon Kwon1
Department of Materials Chemistry, Korea University, Korea
1Advanced Materials Chemistry, Korea University, Korea
|
| Abstract |
Since the finding of graphene, there has been growing interest in new two-dimensional (2D) materials, where the 2D layers are stacked via weak van der Waals interactions. The reduction of a materials’ dimension from bulk (3D) to 2D results in remarkable optical and electrical properties such as the increase of band gap and carrier mobilities due to the quantum confinement effect. Binary IV-V, where IV is Si, Ge, Sn, Pb and VI is P, As, Sb, Bi, have recently been emerged as another potential class of 2D materials. In the present work, we synthesized 2D GeP nanosheets using mechanical exfoliation method. A tip sonication of bulk crystal in N-methyl pyrrolidine (NMP) produced thin nanosheet to show the increase of the band gap, which is about 2.3 eV. First-principles calculations were performed to predict a significant increase of Eg when the number of layers decreases, and an indirect Eg of 2.3 eV for the monolayer. Field-effect transistor was fabricated to show the significant decrease of hole mobility but the increase of on-off ratio as the layer number decreases. We also observed in-plane anisotropic factor. The larger on-off ratio (104) for the thinner ones promises novel 2D (photo)electronic nanodevices. |
| E-mail |
batab2@naver.com |
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123rd General Meeting of the KCS